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RAM modules
Chip-On-Board (COB) technology involves mounting DRAM or Flash semiconductor die directly on a substrate without the need of a packaged component. Eliminating the FBGA or TSOP component package reduces the required substrate area and assembly weight. The saving in area can be as much as 20% in some cases. Using conventional printed circuit boards (PCBs) and standard wire bonding technology, COB technology can yield up to a factor of 5 in weight and volume reduction. COB technology also reduces the number of interconnects between an active die and the substrate (i.e., the package pins), which improves the overall circuit speed, leads to higher clock rates, better electrical performance and improved signal quality and increases the overall reliability of the module. A coating of an Epoxy encapsulent (or Glob Top) is applied that hermetically seals and protects the die and the wire bonded interconnections. The Glob Top also acts like a heat spreader between dies, improves heat emission, adds low coefficients of thermal expansion (CTEs), and provides a hermetically sealed module assembly. The die is glued directly to the PCB and provides for increased heat dissipation from the die through the PCB. Swissbit encapsulates the semiconductor die onto the PCB as a total module package, the complete assembly is extensively temperature tested as a unit, not separate components prior to SMT assembly. This also enables Swissbit to offer its line of COB modules in four temperature grade levels.
DDR SODIMM (200pin)
| SDN25664S3A62MT-60R | 2GB | 333MT/s / CL2.5 | 0°C to 70°C | ||||
| SDN12864S4B52MT-50ER | 1GB | 400MT/s / CL3 | 0°C to 85°C | ||||
| SDN12864S4B52MT-50IR | 1GB | 400MT/s / CL3 | -25°C to 85°C | ||||
| SDN12864S4B52MT-50WR | 1GB | 400MT/s / CL3 | -40°C to 85°C | ||||
| SDN06464O3BK2MT-50ER | 512MB | 400MT/s / CL3 | 0°C to 85°C | ||||
| SDN06464O3BK2MT-50IR | 512MB | 400MT/s / CL3 | -25°C to 85°C | ||||
| SDN06464O3BK2MT-50WR | 512MB | 400MT/s / CL3 | -40°C to 85°C | ||||
| SDN06464O3BK2MT-60ER | 512MB | 333MT/s / CL2.5 | 0°C to 85°C |
DDR2 SODIMM (200pin)
| SEN02G64T1BJ2WI-25R | 2GB | 800MT/s / CL6 | 0°C to 70°C | ||||
| SEN02G64T1BJ2WI-25WR | 2GB | 800MT/s / CL6 | -40°C to 85°C | ||||
| SEN02G64T1BJ2WI-30R | 2GB | 667MT/s / CL5 | 0°C to 70°C | ||||
| SEN02G64T1BJ2WI-30WR | 2GB | 667MT/s / CL5 | -40°C to 85°C | ||||
| SEN06464S2CE1MT-30R | 512MB | 667MT/s / CL5 | 0°C to 70°C | ||||
| SEN06464S2CE1MT-30WR | 512MB | 667MT/s / CL5 | -40°C to 85°C | ||||
| SEN06464S2CE1MT-37R | 512MB | 533MT/s / CL4 | 0°C to 70°C | ||||
| SEN06464S2CE1MT-37WR | 512MB | 533MT/s / CL4 | -40°C to 85°C |
Swissbit's Industrial/OEM SMT DRAM modules are assembled using only high grade components in commercial or industrial temperature ranges. Every raw passive and active component used to build a Swissbit Industrial/OEM memory module has completed the full backend burn-in and test-flow as specified by the component supplier. In addition each assembled module is tested on Automated Test Equipment (ATE) and Application Test Equipment at various operating temperature levels. Extensive Qualification and Validation Testing ensures best compatibility with customer computer platforms and the latest system chipsets.
DDR2 UDIMM ECC(240pin)
| SEU02G72T1BH2MT-25R | 2GB | 800MT/s / CL6 | 0°C to 70°C | ||||
| SEU02G72T1BH2MT-30R | 2GB | 667MT/s / CL5 | 0°C to 70°C | ||||
| SEU01G72S1BH1MT-25R | 1GB | 800MT/s / CL6 | 0°C to 70°C | ||||
| SEU01G72S1BH1MT-30R | 1GB | 667MT/s / CL5 | 0°C to 70°C | ||||
| SEU06472D4BF1MT-30R | 512MB | 667MT/s / CL5 | 0°C to 70°C |





